toshiba’s-new-sic-mosfet-cuts-on-resistance-area-by-58%-for-1,200-v-power-stages-in-ev-chargers

Toshiba has started shipping test samples of the TW007D120E, a 1,200 V trench-gate SiC MOSFET designed for power supply systems in high-power applications, including EV charging stations, energy storage, AI data centers and photovoltaic inverters. The device is built around Toshiba’s proprietary trench-gate structure, which embeds gate electrodes directly inContinue Reading

Released: NASA Goddard Issues Draft Request for Proposal for the Landsat 10 Spacecraft

Landsat Project Science Support May 27, 2026 The Landsat 10 Spacecraft Draft Request for Proposal (DRFP) is available for review via SAM.gov as of May 18, 2026. This solicitation marks a major milestone in continuing the decades-long partnership between NASA and the U.S. Geological Survey (USGS) to acquire, archive, and distribute multispectral imagery of Earth’sContinue Reading